bc 817u pn apr-22-1999 1 npn/pnp silicon transistor array ? for af input stages and driver applications ? high current gain ? low collector-emitter saturation voltage ? two (galvanic) internal isolated npn/pnp transistors in one package vpw09197 1 2 3 4 5 6 eha07177 6 54 3 2 1 c1 b2 e2 c2 b1 e1 tr1 tr2 type marking pin configuration package bc 817u pn 1bs 1=e1 2=b1 3=c2 4=e2 5=b2 6=c1 sc-74 maximum ratings parameter symbol unit value v v ceo 45 collector-emitter voltage collector-base voltage v cbo 50 v ebo 5 emitter-base voltage ma 500 i c dc collector current peak collector current 1 i cm a i b 100 base current ma peak base current i bm 200 total power dissipation , t s = 115 c p tot mw 330 t j 150 junction temperature c storage temperature t st g -65 ... 150 thermal resistance junction ambient 1) r thja 375 k/w junction - soldering point r thjs 105 k/w 1) package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm 2 cu
bc 817u pn apr-22-1999 2 electrical characteristics at t a =25c, unless otherwise specified parameter symbol values unit max. min. typ. dc characteristics - v (br)ceo v collector-emitter breakdown voltage i c = 10 ma, i b = 0 45 - collector-base breakdown voltage i c = 10 a, i b = 0 v (br)cbo - - 50 - - 5 v (br)ebo emitter-base breakdown voltage i e = 10 a, i c = 0 collector cutoff current v cb = 25 v, i e = 0 i cbo - na 100 - - 50 i cbo - collector cutoff current v cb = 25 v, i e = 0 , t a = 150 c a - 100 emitter cutoff current v eb = 4 v, i c = 0 - i ebo na dc current gain 1) i c = 100 ma, v ce = 1 v i c = 300 ma, v ce = 1 v - h fe 250 - 400 - 160 100 - - v cesat collector-emitter saturation voltage1) i c = 500 ma, i b = 50 ma v 0.7 - v besat - base-emitter saturation voltage 1) i c = 500 ma, i b = 50 ma 1.2 ac characteristics - 170 - transition frequency i c = 50 ma, v ce = 5 v, f = 100 mhz f t mhz collector-base capacitance v cb = 10 v, f = 1 mhz - 6 pf c cb - - c eb emitter-base capacitance v eb = 0.5 v, f = 1 mhz 60 - 1) pulse test: t < 300 s; d < 2%
bc 817u pn apr-22-1999 3 total power dissipation p tot = f ( t a *; t s ) * package mounted on epoxy 0 20 40 60 80 100 120 c 150 t a ,t s 0 50 100 150 200 250 300 mw 400 p tot t s t a collector cutoff current i cbo = f ( t a ) v cb = 25v 0 10 ehp00221 bc 817/818 a t 150 0 5 10 cbo na 50 100 1 10 2 10 4 10 ?c typ max 10 3 permissible pulse load r thjs = f ( t p ) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -1 10 0 10 1 10 2 10 3 10 k/w r thjs d=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 permissible pulse load p totmax / p totdc = f ( t p ) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 3 10 p totmax / p totdc d=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
bc 817u pn apr-22-1999 4 collector-emitter saturation voltage i c = f ( v cesat ), h fe = 10 0 10 ehp00223 bc 817/818 cesat v 0.4 v 0.8 -1 10 0 10 1 3 10 5 5 c ma 5 2 10 0.2 0.6 ? c -50 25 ? c 150 ? c base-emitter saturation voltage i c = f (v besat ), h fe = 10 0 10 ehp00222 bc 817/818 besat v 2.0 v 4.0 -1 10 0 10 1 3 10 5 5 c ma 5 2 10 1.0 3.0 ? c -50 25 ? c ? c 150 transition frequency f t = f ( i c ) v ce = 5v 10 ehp00218 bc 817/818 03 10 ma 1 10 3 10 5 5 10 1 10 2 10 2 c t f mhz dc current gain h fe = f ( i c ) v ce = 5v 10 ehp00224 bc 817/818 -1 3 10 ma 0 10 3 10 5 5 10 0 10 1 10 1 c fe h 2 10 2 10 ? c 100 5 25 ? c -50 ? c
|
